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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914 CATV amplifier module Product specification Supersedes data of 2000 Mar 02 2000 Apr 20 Philips Semiconductors Product specification CATV amplifier module FEATURES * Excellent linearity * Extremely low noise * Excellent return loss properties * Rugged construction * Gold metallization ensures excellent reliability. APPLICATIONS * CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC), employing both GaAs and Si dies. Side view MSA319 CGD914 PINNING - SOT115J Pin 1 2 and 3 5 7 and 8 9 input common +VB common output DESCRIPTION handbook, halfpage 1 2 3 5 7 8 9 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 19.75 20.2 345 MAX. 20.25 21.5 375 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi supply voltage RF input voltage single tone 132 channels flat Tstg Tmb storage temperature operating mounting base temperature PARAMETER - - - - -40 -20 MIN. - 70 45 +100 +100 dBmV dBmV C C MAX. 30 V UNIT 2000 Apr 20 2 Philips Semiconductors Product specification CATV amplifier module CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 . SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz f = 45 to 100 MHz f = 100 to 800 MHz f = 800 to 870 MHz flatness narrow band s11 input return losses in each 6 MHz segment f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s21 s12 CTB phase response reverse isolation composite triple beat f = 50 MHz RFout to RFin 79 chs; fm = 445.25 MHz; note 1 112 chs; fm = 649.25 MHz; note 2 132 chs; fm = 745.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz Xmod cross modulation 79 chs; fm = 55.25 MHz; note 1 112 chs; fm = 55.25 MHz; note 2 132 chs; fm = 55.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz CONDITIONS MIN. 19.75 20.2 0.2 -0.25 -0.6 -0.45 - 20 20 18 16 15 14 14 10 21 21 20 19 18 17 16 14 -45 - - - - - - - - - - - - - TYP. 20 21 1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - CGD914 MAX. 20.25 21.5 1.5 +0.25 +0.4 +0.2 0.1 - - - - - - - - - - - - - - - - +45 22 -76 -64 -55 -73 -64 -60 -70 -62 -57 -69 -65 -63 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dB dB dB dB dB dB dB dB dB 2000 Apr 20 3 Philips Semiconductors Product specification CATV amplifier module CGD914 SYMBOL PARAMETER CONDITIONS 79 chs; fm = 446.5 MHz; note 1 112 chs; fm = 746.5 MHz; note 2 132 chs; fm = 860.5 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz MIN. - - - - - - - - - - - - - - - - - - - 69 66 63 345 TYP. - - - - - - - - - - - - 2.5 2.5 2.6 3 - - - - - - 360 MAX. -71 -60 -56 -63 -54 -49 -59 -53 -48 -60 -59 -57 3 3 3.5 3.5 -60 -54 -50 - - - 375 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dBmV dBmV mA CSO Sum composite second order distortion (sum) CSO Diff composite second order distortion (diff) 79 chs; fm = 150 MHz; note 1 112 chs; fm = 150 MHz; note 2 132 chs; fm = 150 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 150 MHz 112 chs flat; Vo = 44 dBmV; fm = 150 MHz 132 chs flat; Vo = 44 dBmV; fm = 150 MHz NF noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 870 MHz d2 second order distortion note 4 note 5 note 6 Vo output voltage dim = -60 dB; note 7 dim = -60 dB; note 8 dim = -60 dB; note 9 Itot Notes total current consumption (DC) note 10 1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz. 3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz). 4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz. 5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz. 6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz. 7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo -6 dB; fr = 549.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 538.25 MHz. 8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo -6 dB; fr = 749.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 738.25 MHz. 9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo -6 dB; fr = 860.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 849.25 MHz. 10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2000 Apr 20 4 Philips Semiconductors Product specification CATV amplifier module CGD914 handbook, halfpage -60 MCD976 52 Vo (dBmV) 48 handbook, halfpage -60 MCD977 52 Vo (dBmV) 48 CTB (dB) -70 (1) Xmod (dB) -70 (1) -80 44 -80 44 -90 (2) (3) (4) (2) 40 -90 40 (3) (4) -100 0 200 400 600 36 1000 800 f (MHz) -100 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.2 Composite triple beat as a function of frequency under tilted conditions. Fig.3 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -50 MCD978 52 Vo (dBmV) 48 handbook, halfpage -50 MCD979 54 (2) (1) (3) CSO (dB) -60 (1) CSO (dB) -60 Vo (dBmV) 50 (2) (3) -70 44 (4) 46 -70 (4) -80 40 42 -80 -90 38 -90 0 200 400 600 36 1000 800 f (MHz) -100 0 200 400 600 34 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.4 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.5 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2000 Apr 20 5 Philips Semiconductors Product specification CATV amplifier module CGD914 handbook, halfpage -60 MCD980 48 Vo (dBmV) handbook, halfpage -60 MCD981 48 Vo (dBmV) CTB (dB) -70 (1) Xmod (dB) -70 (1) 44 44 (2) (2) -80 (3) (4) 40 -80 40 (3) -90 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 36 1000 800 f (MHz) (4) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.6 Composite triple beat as a function of frequency under flat conditions. Fig.7 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD982 48 Vo (dBmV) handbook, halfpage -50 MCD983 48 Vo (dBmV) CSO (dB) -60 (1) (2) (3) CSO (dB) -60 (2) (1) (3) 44 44 (4) -70 (4) 40 -70 40 -80 36 -80 36 -90 0 200 400 600 32 1000 800 f (MHz) -90 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.8 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.9 Composite second order distortion (diff) as a function of frequency under flat conditions. 2000 Apr 20 6 Philips Semiconductors Product specification CATV amplifier module CGD914 handbook, halfpage -40 MCD984 52 Vo (dBmV) 48 handbook, halfpage -50 MCD985 52 Vo (dBmV) 48 CTB (dB) -50 (1) Xmod (dB) -60 (1) -60 44 -70 (2) 44 (2) -70 (3) (4) 40 -80 40 (3) -80 0 200 400 600 36 1000 800 f (MHz) -90 (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.10 Composite triple beat as a function of frequency under tilted conditions. Fig.11 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -50 MCD986 (1) (2) 52 Vo (dBmV) 48 handbook, halfpage -50 MCD987 52 Vo (dBmV) 48 (1) CSO (dB) -60 (3) CSO (dB) -60 (4) -70 44 -70 44 (2) -80 40 -80 (3) 40 -90 0 200 400 600 36 1000 800 f (MHz) -90 (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.12 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.13 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2000 Apr 20 7 Philips Semiconductors Product specification CATV amplifier module CGD914 handbook, halfpage -50 MCD988 48 Vo (dBmV) handbook, halfpage -60 MCD989 48 Vo (dBmV) CTB (dB) -60 (1) Xmod (dB) -70 (1) (2) 44 44 (2) -70 (3) (4) 40 -80 (3) 40 -80 36 -90 (4) 36 -90 0 200 400 600 32 1000 800 f (MHz) -100 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.14 Composite triple beat as a function of frequency under flat conditions. Fig.15 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD990 (2) (3) (4) (1) 48 Vo (dBmV) 44 handbook, halfpage -50 MCD991 48 Vo (dBmV) CSO (dB) -60 CSO (dB) -60 (2) (1) (3) 44 -70 40 -70 (4) 40 -80 36 -80 36 -90 0 200 400 600 32 1000 800 f (MHz) -90 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.16 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.17 Composite second order distortion (diff) as a function of frequency under flat conditions. 2000 Apr 20 8 Philips Semiconductors Product specification CATV amplifier module CGD914 handbook, halfpage -40 MCD992 52 Vo (dBmV) 48 handbook, halfpage -50 MCD993 52 Vo (dBmV) 48 CTB (dB) -50 (1) Xmod (dB) -60 (1) (2) -60 44 (3) (4) -70 (2) 44 (3) -70 40 -80 (4) 40 -80 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.18 Composite triple beat as a function of frequency under tilted conditions. Fig.19 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -40 MCD994 52 Vo (dBmV) 48 handbook, halfpage -40 MCD995 52 (2) (1) (3) CSO (dB) -50 (1) CSO (dB) -50 Vo (dBmV) 48 (2) -60 44 -70 40 (4) 44 -60 (3) (4) 40 -70 -80 36 -80 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 32 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.20 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.21 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2000 Apr 20 9 Philips Semiconductors Product specification CATV amplifier module CGD914 handbook, halfpage -40 MCD996 48 Vo (dBmV) handbook, halfpage -60 MCD997 48 Vo (dBmV) CTB (dB) -50 (1) Xmod (dB) -70 (1) (2) 44 44 -60 (2) (3) (4) 40 -80 (3) 40 -70 36 -90 (4) 36 -80 0 200 400 600 32 1000 800 f (MHz) -100 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.22 Composite triple beat as a function of frequency under flat conditions. Fig.23 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD998 (2) (3) (4) (1) 48 Vo (dBmV) 44 handbook, halfpage -40 MCD999 48 Vo (dBmV) CSO (dB) -60 CSO (dB) -50 (2) (1) 44 -70 40 -60 (3) 40 -80 36 -70 (4) 36 -90 0 200 400 600 32 1000 800 f (MHz) -80 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.24 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.25 Composite second order distortion (diff) as a function of frequency under flat conditions. 2000 Apr 20 10 Philips Semiconductors Product specification CATV amplifier module PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads CGD914 SOT115J D E Z p A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8 mm 20.8 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 38.1 25.4 10.2 4.2 44.75 6-32 0.25 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-06 2000 Apr 20 11 Philips Semiconductors Product specification CATV amplifier module DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) CGD914 This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2000 Apr 20 12 Philips Semiconductors Product specification CATV amplifier module NOTES CGD914 2000 Apr 20 13 Philips Semiconductors Product specification CATV amplifier module NOTES CGD914 2000 Apr 20 14 Philips Semiconductors Product specification CATV amplifier module NOTES CGD914 2000 Apr 20 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 69 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603510/04/pp16 Date of release: 2000 Apr 20 Document order number: 9397 750 06965 |
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